The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Nov. 18, 2010
Hyeokjin Jang, Suwon, KR;
Minshik Kim, Suwon, KR;
Kwangmin Lee, Suwon, KR;
Sungyong Ko, Suwon, KR;
Hwankook Chae, Suwon, KR;
Kunjoo Park, Suwon, KR;
Keehyun Kim, Suwon, KR;
Weonmook Lee, Suwon, KR;
Hyeokjin Jang, Suwon, KR;
Minshik Kim, Suwon, KR;
Kwangmin Lee, Suwon, KR;
Sungyong Ko, Suwon, KR;
Hwankook Chae, Suwon, KR;
Kunjoo Park, Suwon, KR;
Keehyun Kim, Suwon, KR;
Weonmook Lee, Suwon, KR;
DMS Co., Ltd., Suwon Kyungki-Do, KR;
Abstract
A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.