The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Dec. 21, 2011
Wenzhong Zhu, Apple Valley, MN (US);
Yong LU, Edina, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Alan Xuguang Wang, Eden Prairie, MN (US);
Xiaohua Lou, Milpitas, CA (US);
Haiwen Xi, Prior Lake, MN (US);
Wenzhong Zhu, Apple Valley, MN (US);
Yong Lu, Edina, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Alan Xuguang Wang, Eden Prairie, MN (US);
Xiaohua Lou, Milpitas, CA (US);
Haiwen Xi, Prior Lake, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.