The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Jul. 21, 2006
Motoyasu Terao, Hinode, JP;
Satoru Hanzawa, Hachioji, JP;
Takahiro Morikawa, Hachioji, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Riichiro Takemura, Tokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Nozomu Matsuzaki, Kodaira, JP;
Motoyasu Terao, Hinode, JP;
Satoru Hanzawa, Hachioji, JP;
Takahiro Morikawa, Hachioji, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Riichiro Takemura, Tokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Nozomu Matsuzaki, Kodaira, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A recording layermade of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layerpositioned on a lower electrode TP side of the recording layeris higher than the corresponding concentration of a second layerpositioned on an upper electrodeside. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.