The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Apr. 08, 2010
Applicants:

Hitoshi Saita, Tokyo, JP;

Naoto Tsukamoto, Tokyo, JP;

Akira Shibue, Tokyo, JP;

Kenji Horino, Tokyo, JP;

Inventors:

Hitoshi Saita, Tokyo, JP;

Naoto Tsukamoto, Tokyo, JP;

Akira Shibue, Tokyo, JP;

Kenji Horino, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/02 (2006.01); C04B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide:ABO  (1)where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.


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