The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Nov. 17, 2009
Applicants:

Tetsuo Sato, San Jose, CA (US);

Matsuura Nobuyoshi, Takasaki, JP;

Ryotaro Kudo, Takasaki, JP;

Hideo Ishii, Takasaki, JP;

Shin Chiba, Takasaki, JP;

Inventors:

Tetsuo Sato, San Jose, CA (US);

Matsuura Nobuyoshi, Takasaki, JP;

Ryotaro Kudo, Takasaki, JP;

Hideo Ishii, Takasaki, JP;

Shin Chiba, Takasaki, JP;

Assignee:

Renesas Electronics America Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method can include obtaining a voltage across a first transistor as an obtained voltage. The method can also include multiplying the obtained voltage by a predetermined multiple M to yield a multiplied voltage. The method can further include applying the multiplied voltage to a second transistor, wherein the second transistor is N times smaller than the first transistor. The method can additionally include providing an output current of the second transistor as an M/N scaled estimate of an output current of the first transistor.


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