The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Jan. 21, 2010
Ryoichi Kajiwara, Hitachi, JP;
Shigehisa Motowaki, Mito, JP;
Kazutoshi Ito, Hitachi, JP;
Toshiaki Ishii, Hitachi, JP;
Katsuo Arai, Takasaki, JP;
Takuya Nakajo, Numata, JP;
Hidemasa Kagii, Takasaki, JP;
Ryoichi Kajiwara, Hitachi, JP;
Shigehisa Motowaki, Mito, JP;
Kazutoshi Ito, Hitachi, JP;
Toshiaki Ishii, Hitachi, JP;
Katsuo Arai, Takasaki, JP;
Takuya Nakajo, Numata, JP;
Hidemasa Kagii, Takasaki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.