The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Jun. 23, 2009
Applicants:

Jum-yong Park, Gyeonggi-do, KR;

Noh-jung Kwak, Gyeonggi-do, KR;

Yong-soo Choi, Gyeonggi-do, KR;

Cheol-hwi Ryu, Gyeonggi-do, KR;

Inventors:

Jum-Yong Park, Gyeonggi-do, KR;

Noh-Jung Kwak, Gyeonggi-do, KR;

Yong-Soo Choi, Gyeonggi-do, KR;

Cheol-Hwi Ryu, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor, Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.


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