The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2012

Filed:

Nov. 23, 2009
Applicants:

James D. Carducci, Sunnyvale, CA (US);

Kin Pong Lo, Fremont, CA (US);

Kallol Bera, San Jose, CA (US);

Michael C. Kutney, Santa Clara, CA (US);

Matthew L. Miller, Fremont, CA (US);

Inventors:

James D. Carducci, Sunnyvale, CA (US);

Kin Pong Lo, Fremont, CA (US);

Kallol Bera, San Jose, CA (US);

Michael C. Kutney, Santa Clara, CA (US);

Matthew L. Miller, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.


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