The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Nov. 16, 2009
Applicants:
Lu-yang Kao, Hsinchu, TW;
Yi-tyng Wu, Chia-I, TW;
Inventors:
Lu-Yang Kao, Hsinchu, TW;
Yi-Tyng Wu, Chia-I, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1339 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
Abstract
A liquid crystal on silicon (LCoS) cell structure includes a substrate, a plurality of top metal regions arranged in an array, a dielectric material filling between the top metal regions and a composite post spacer disposed on the dielectric material and encircling to form a cell space. The composite post spacer includes a first dielectric layer disposed on the dielectric material and a spacer material layer disposed on the first dielectric layer. The spacer material layer and the first dielectric layer are substantially different.