The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Oct. 15, 2010
Applicants:

Chia-hui Chen, Hsinchu, TW;

Guang-cheng Wang, Zhubei, TW;

Inventors:

Chia-Hui Chen, Hsinchu, TW;

Guang-Cheng Wang, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/08 (2006.01); H03K 19/094 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a first pair of stacked PMOS devices comprising a first PMOS device and a second PMOS device, a first pumping circuit is coupled between a gate of the first PMOS device and a P pre-driver signal. In a second pair of stacked NMOS devices comprising a first NMOS device and a second NMOS device, a second pumping circuit is coupled between a gate of the first NMOS device and an N pre-driver signal. The pumping circuits recognizing the transition from the pre-driver signals provide a voltage to the gate of the first PMOS device and of the first NMOS device so that the first PMOS and NMOS devices are turned on better. As a result, their voltage Vds peaks are suppressed to a safe level; the devices avoid hot-carrier degradations; and their lifetimes are prolonged.


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