The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
May. 27, 2010
Applicants:
Hajime Fujikura, Mito, JP;
Takeshi Eri, Hitachi, JP;
Inventors:
Hajime Fujikura, Mito, JP;
Takeshi Eri, Hitachi, JP;
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.
Fujikura, Hajime. (2012). Group iii nitride semiconductor free-standing substrate and method of manufacturing the same, group iii nitride semiconductor device and method of manufacturing the same (U.S. Patent No. 8310029). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8310029
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile