The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Apr. 20, 2009
Applicant:
Hiroyuki Fujimoto, Tokyo, JP;
Inventor:
Hiroyuki Fujimoto, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate, a first diffusion region, a gate insulating film, a gate electrode, a second diffusion region and a contact plug. The semiconductor substrate includes a base and at least a pillar. The first diffusion region is disposed in the base. The gate insulating film covers a side surface of the pillar. The gate electrode is separated from the pillar by the gate insulating film. The second diffusion region is disposed in an upper portion of the pillar. The contact plug is connected to the second diffusion region. The contact plug is connected to the entirety of the top surface of the pillar.