The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Jun. 24, 2011
Applicants:

Mitsuaki Oya, Aichi, JP;

Toshiya Yokogawa, Nara, JP;

Atsushi Yamada, Osaka, JP;

Ryou Kato, Osaka, JP;

Inventors:

Mitsuaki Oya, Aichi, JP;

Toshiya Yokogawa, Nara, JP;

Atsushi Yamada, Osaka, JP;

Ryou Kato, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A nitride-based semiconductor light-emitting deviceincludes a GaN substrate, of which the principal surface is an m-plane, a semiconductor multilayer structurethat has been formed on the m-planeof the GaN-based substrate, and an electrodearranged on the semiconductor multilayer structure. The electrodeincludes an Mg alloy layerwhich is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure


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