The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Feb. 26, 2008
Christophe Figuet, Crolles, FR;
Oleg Kononchuk, Grenoble, FR;
Christophe Figuet, Crolles, FR;
Oleg Kononchuk, Grenoble, FR;
Soitec, Bernin, FR;
Abstract
The present invention relates to method of fabricating a (110) oriented silicon substrate and to a method of fabricating a bonded pair of substrates comprising such a (110) oriented silicon substrate. The invention further relates to a silicon substrate with (110) orientation and to a bonded pair of silicon substrates comprising a first silicon substrate with (100) orientation and a second silicon substrate with (110) orientation. Methods include the steps of providing a basic silicon substrate with (110) orientation, the basic silicon substrate having a roughness being equal or less than 0.15 nm RMS, and depositing epitaxially a silicon layer with (110) orientation on the basic silicon substrate at a pressure between 40 Torr to 120 Torr, and at a temperature between about 1000° C. and about 1200° C. and using trichlorosilane or dichlorosilane as silicon precursor gas.