The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Sep. 10, 2010
Applicants:

Susan Alie, Stoneham, MA (US);

Stephen D. Saylor, South Hamilton, MA (US);

Christopher J. Vineis, Watertown, MA (US);

Inventors:

Susan Alie, Stoneham, MA (US);

Stephen D. Saylor, South Hamilton, MA (US);

Christopher J. Vineis, Watertown, MA (US);

Assignee:

SiOnyx, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Photovoltaic semiconductor devices and associated methods are provided. In one aspect, for example, a method of making a photovoltaic semiconductor device having enhanced electromagnetic radiation absorption can include applying a damage removal etch (DRE) to a semiconductor material to an RMS surface roughness of from about 0.5 nm to about 50 nm and texturing a single side of the semiconductor material. The texturing further includes irradiating a target region of the semiconductor material with laser radiation to create features having a size of from about 50 nm to about 10 microns.


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