The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Mar. 20, 2012
Applicants:

Tadahiro Sasaki, Tokyo, JP;

Kazuhide Abe, Kanagawa, JP;

Kazuhiko Itaya, Kanagawa, JP;

Inventors:

Tadahiro Sasaki, Tokyo, JP;

Kazuhide Abe, Kanagawa, JP;

Kazuhiko Itaya, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power amplifier according to the embodiments includes: a silicon substrate; an input terminal configured to receive an input of a RF signal; a power dividing unit configured to divide the RF signal into a first signal and a second signal; a phase modulating unit configured to modulate a phase of the second signal; an N well formed in the silicon substrate; a P well formed in the N well and configured to receive an input of the second signal of a modulated phase; a gate insulating film formed on the P well; a gate electrode formed on the gate insulating film and configured to receive an input of the first signal; source and drain electrodes formed on both sides of the gate electrode in the silicon substrate; and an output terminal configured to output a RF signal obtained from the drain electrode.


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