The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Aug. 23, 2011
Zi-ping Chen, New Taipei, TW;
Tung-yang Chen, Jhubei, TW;
Kun-hsien Lin, Hsinchu, TW;
Ryan Hsin-chin Jiang, Taipei, TW;
Zi-Ping Chen, New Taipei, TW;
Tung-Yang Chen, Jhubei, TW;
Kun-Hsien Lin, Hsinchu, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Amazing Microelectronics Corp., New Taipei, TW;
Abstract
An electrostatic discharge protection device structure is disclosed, which comprises a semiconductor substrate and an N-type epitaxial layer arranged on the semiconductor substrate. At least one snapback cascade structure is arranged in the N-type epitaxial layer, wherein the snapback cascade structure further comprises first and second P-type wells arranged in the N-type epitaxial layer. First and second heavily doped areas arranged in the first P-type well respectively belong to opposite types. And, third and fourth heavily doped areas arranged in the second P-type well respectively belong to opposite types, wherein the second and third heavily doped areas respectively belong to opposite types and are electrically connected with each other. When the first heavily doped area receives an ESD signal, an ESD current flows from the first heavily doped area to the fourth heavily doped area through the first P-type well, the N-type epitaxial layer, and the second P-type well.