The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Dec. 12, 2011
Applicants:

Akira Fujimura, Saratoga, CA (US);

Lance Glasser, Saratoga, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

Lance Glasser, Saratoga, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01);
U.S. Cl.
CPC ...
Abstract

A method for fracturing or mask data preparation or proximity effect correction of a pattern to be formed on a surface is disclosed in which a plurality of variable shaped beam (VSB) shots are determined, and in which charged particle beam simulation is used to calculate the pattern which the plurality of VSB shots will form on the surface. At least two shots in the plurality of VSB shots overlap each other. In some embodiments, assigned dosages of at least two shots differ before proximity effect correction (PEC). In other embodiments an optimization technique may be used embodiments.


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