Semiconductor device and semiconductor memory device

Abstract

A semiconductor device comprises a memory cell array including memory cells, a first bit line transmitting data stored in a selected memory cells, a single-ended first sense amplifier amplifying a signal voltage of the first bit line and converting the voltage into an output current, a second bit line selectively connected to the first bit line via the first sense amplifier, a second sense amplifier determining a level of the signal voltage, and a sense amplifier control circuit detecting a temperature of the memory cell array during an operation and controlling an end of an activation period of the first and/or second sense amplifiers in accordance with a detection result of the temperature. In the semiconductor device, the sense amplifier control circuit controls to delay the end of the activation period at least at a predetermined high temperature indicated by the detection result relative to at an ordinary temperature.