The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Feb. 29, 2012
Applicants:

Jeffrey P. Gambino, Westford, VT (US);

Zhong-xiang He, Essex Junction, VT (US);

Kevin N. Ogg, Burlington, VT (US);

Richard J. Rassel, Colchester, VT (US);

Robert M. Rassel, Colchester, VT (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

Zhong-Xiang He, Essex Junction, VT (US);

Kevin N. Ogg, Burlington, VT (US);

Richard J. Rassel, Colchester, VT (US);

Robert M. Rassel, Colchester, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/267 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via extends from a top surface of the second dielectric layer to a bottom surface of the first dielectric layer is formed in the metal interconnect structure. The conductive light shield may be formed within a contact level between a top surface of a semiconductor substrate and a first metal line level, or may be formed in any metal interconnect via level between two metal line levels. The inventive CMOS image sensor pixel enables reduction of noise in the signal stored in the floating drain.


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