The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Mar. 13, 2007
Applicant:
Tetsuya Nishizuka, Amagasaki, JP;
Inventor:
Tetsuya Nishizuka, Amagasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention relates to a method for conducting an etching process which uses a plasma of a process gas. This etching process is conducted on a wafer W including a substrate, an underlying filmformed on the substrate, and a filmto be etched that is formed on the underlying film. A main etching gas formed up of a chlorine-containing gas and an oxygen-containing gas, and a nitrogen-containing gas are used as the process gas. In this etching method, etching is conducted under a condition that an N/Nintensity ratio of Nto N, derived from emission spectra of the plasma, is at least 0.6.