The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Feb. 14, 2011
Applicant:
Masahiro Yamaguchi, Tokyo, JP;
Inventor:
Masahiro Yamaguchi, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes, but is not limited to, the following processes. A seed layer is formed over a substrate. The seed layer includes first, second, and third portions. A first electrode covering the first portion of the seed layer is formed without forming an electrode on the second and third portions of the seed layer. The third portion of the seed layer is removed so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.