The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Dec. 27, 2007
Hyung-kook Park, Gyeonggi-do, KR;
Jin-kyun Hong, Gyeonggi-do, KR;
Kun Kim, Gyeongsangbuk-do, KR;
Chung-geun Koh, Seoul, KR;
Hyung-Kook Park, Gyeonggi-do, KR;
Jin-Kyun Hong, Gyeonggi-do, KR;
Kun Kim, Gyeongsangbuk-do, KR;
Chung-Geun Koh, Seoul, KR;
Siltron Inc., Gumi, Gyeongsangbuk-do, KR;
Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;
Abstract
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.