The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
May. 26, 2006
Richard W. Foote, Kennedale, TX (US);
Edward F. Pressley, Arlington, TX (US);
Joseph A. Desantis, San Jose, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Christoher J. Knorr, Los Gatos, CA (US);
Richard W. Foote, Kennedale, TX (US);
Edward F. Pressley, Arlington, TX (US);
Joseph A. DeSantis, San Jose, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Christoher J. Knorr, Los Gatos, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An improved method for manufacturing bipolar transistors is disclosed. The method for forming a PNP transistor comprises the steps of forming a P type collector on a substrate, forming a PNP epitaxial base on the P type collector, forming a PNP extrinsic base in the PNP epitaxial base, and forming a PNP emitter in contact with the PNP extrinsic base. The method for forming an NPN transistor comprises the steps of forming an N type collector on a substrate, forming a NPN epitaxial base on the N type collector, forming an NPN extrinsic base in the NPN epitaxial base, and forming an NPN emitter in contact with the NPN extrinsic base. The PNP and NPN transistors may be manufactured in the same control flow process.