The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 20, 2009
Bruce Balch, Saranac, NY (US);
Kerry Bernstein, Underhill, VT (US);
John Joseph Ellis-monaghan, Grand Isle, VT (US);
Nazmul Habib, South Burlington, VT (US);
Bruce Balch, Saranac, NY (US);
Kerry Bernstein, Underhill, VT (US);
John Joseph Ellis-Monaghan, Grand Isle, VT (US);
Nazmul Habib, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor.