The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Aug. 10, 2010
James W. Adkisson, Jericho, VT (US);
John J. Ellis-monaghan, Grand Isle, VT (US);
Rajendran Krishnasamy, Essex Juction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles F. Musante, South Burlington, VT (US);
Richard J. Rassel, Essex Juction, VT (US);
James W. Adkisson, Jericho, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Rajendran Krishnasamy, Essex Juction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles F. Musante, South Burlington, VT (US);
Richard J. Rassel, Essex Juction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further includes forming insulation sidewalls on the middle gate structure. The method further includes forming spacer transfer gates on the gate dielectric on opposing sides of the middle gate, adjacent to the insulation sidewalls which isolate the middle gate structure from the spacer transfer gates. The method further includes forming a photo-diode region in electrical contact with one of the spacer transfer gates and a floating diffusion in electrical contact with another of the spacer transfer gates.