The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Mar. 23, 2009
James F. Mack, Palo Alto, CA (US);
Neil Dasgupta, Menlo Park, CA (US);
Timothy P. Holme, Menlo Park, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Andrei Iancu, Stanford, CA (US);
Wonyoung Lee, Stanford, CA (US);
James F. Mack, Palo Alto, CA (US);
Neil Dasgupta, Menlo Park, CA (US);
Timothy P. Holme, Menlo Park, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Andrei Iancu, Stanford, CA (US);
Wonyoung Lee, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Motor Co., Ltd, Tokyo, JP;
Abstract
A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.