The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Jun. 07, 2010
Applicants:

Byungkyu Cho, Seoul, KR;

Kwang Soo Seol, Yongin-si, KR;

Sunghoi Hur, Seoul, KR;

Jungdal Choi, Seoul, KR;

Inventors:

ByungKyu Cho, Seoul, KR;

Kwang Soo Seol, Yongin-si, KR;

Sunghoi Hur, Seoul, KR;

Jungdal Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A channel pre-charge method of a nonvolatile memory device including a cell string includes pre-charging a channel of the cell string according to a first word line bias condition and pre-charging the channel of the cell string according to a second word line bias condition, different than the first word line bias condition.


Find Patent Forward Citations

Cho, ByungKyu. (2012). Channel precharge and program methods of a nonvolatile memory device (U.S. Patent No. 8295097). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8295097

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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