The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jun. 04, 2010
Kazuo Aizawa, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Junji Tominaga, Ibaraki, JP;
Alexander Kolobov, Ibaraki, JP;
Paul Fons, Ibaraki, JP;
Robert Simpson, Ibaraki, JP;
Kazuo Aizawa, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Junji Tominaga, Ibaraki, JP;
Alexander Kolobov, Ibaraki, JP;
Paul Fons, Ibaraki, JP;
Robert Simpson, Ibaraki, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A solid-state memory device includes: a superlattice laminate having plural crystal layers laminated therein, the crystal layers including first and second crystal layers having mutually opposite compositions; a lower electrode provided on a first surface in a laminating direction of the superlattice laminate; and an upper electrode provided on a second surface of the superlattice laminate in the laminating direction. The first crystal layer included in the superlattice laminate is made of a phase change compound. According to the present invention, the superlattice laminate laminated in opposite directions of the upper and lower electrodes is sandwiched between these electrodes. Therefore, when an electric energy is applied to the superlattice laminate via these electrodes, a uniform electric energy can be applied to a laminated surface of the superlattice laminate. Accordingly, fluctuation of a resistance is small even when information is repeatedly rewritten, and data can be read stably as a result.