The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Nov. 27, 2008
Shuichiro Yasuda, Kanagawa, JP;
Katsuhisa Aratani, Aichi, JP;
Akira Kouchiyama, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Satoshi Sasaki, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Katsuhisa Aratani, Aichi, JP;
Akira Kouchiyama, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Satoshi Sasaki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element, a nonlinear resistance element, and an MOS transistorare electrically connected in series. The storage elementhas a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance elementhas a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile