The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jun. 10, 2010
Hideaki Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Seiji Nakahata, Itami, JP;
Tomoki Uemura, Itami, JP;
Hideaki Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Seiji Nakahata, Itami, JP;
Tomoki Uemura, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal masshas a wurtzitic crystalline structure and, at 30° C., its elastic constant Cis from 348 GPa to 365 GPa and its elastic constant Cis from 90 GPa to 98 GPa; alternatively its elastic constant Cis from 352 GPa to 362 GPa.