The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Sep. 22, 2006
Applicants:
Ming-tsong Wang, Taipei, TW;
Tong-chern Ong, Taipei, TW;
Inventors:
Ming-Tsong Wang, Taipei, TW;
Tong-Chern Ong, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A flash memory cell includes a substrate, a blocking layer over the substrate, a floating gate over the blocking layer, a retention layer over the floating gate, a control gate over the retention layer, a tunneling layer over the control gate, a top gate over the tunneling layer, and a voltage source electrically coupled between the top gate and the control gate. Various charge tunneling mechanisms may be used for charges to tunnel through the retention layer.