The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Mar. 28, 2011
Applicants:

Zvi Or-bach, San Jose, CA (US);

Deepak C. Sekar, San Jose, CA (US);

Brian Cronquist, San Jose, CA (US);

Israel Beinglass, Sunnyvale, CA (US);

Jan Lodewijk DE Jong, Cupertino, CA (US);

Inventors:

Zvi Or-Bach, San Jose, CA (US);

Deepak C. Sekar, San Jose, CA (US);

Brian Cronquist, San Jose, CA (US);

Israel Beinglass, Sunnyvale, CA (US);

Jan Lodewijk de Jong, Cupertino, CA (US);

Assignee:

MonolithIC 3D Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.


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