The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Feb. 22, 2010
Applicants:
Tomoo Nakayama, Kanagawa, JP;
Yoshiko Kasama, Kanagawa, JP;
Eiichi Fujikura, Yamagata, JP;
Atsushi Kikuchi, Yamagata, JP;
Inventors:
Tomoo Nakayama, Kanagawa, JP;
Yoshiko Kasama, Kanagawa, JP;
Eiichi Fujikura, Yamagata, JP;
Atsushi Kikuchi, Yamagata, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.