The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Oct. 28, 2008
Hui-tae Kim, Gyeongsangnam-do, KR;
Bong-soo Kwon, Gyeongsangbuk-do, KR;
Hack-joo Lee, Gyeonggi-do, KR;
Nae-eung Lee, Gyeonggi-do, KR;
Jong-won Shon, Gyunggi-do, KR;
Hui-Tae Kim, Gyeongsangnam-do, KR;
Bong-Soo Kwon, Gyeongsangbuk-do, KR;
Hack-Joo Lee, Gyeonggi-do, KR;
Nae-Eung Lee, Gyeonggi-do, KR;
Jong-Won Shon, Gyunggi-do, KR;
Jusung Engineering Co., Ltd., Gwangju-si, Gyeonggi-do, unknown;
Abstract
A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.