The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Nov. 02, 2005
Takashi Ozaki, Toyama, JP;
Osamu Kasahara, Toyama, JP;
Takaaki Noda, Toyama, JP;
Kiyohiko Maeda, Imizu, JP;
Atsushi Moriya, Toyama, JP;
Minoru Sakamoto, Tsukuba, JP;
Takashi Ozaki, Toyama, JP;
Osamu Kasahara, Toyama, JP;
Takaaki Noda, Toyama, JP;
Kiyohiko Maeda, Imizu, JP;
Atsushi Moriya, Toyama, JP;
Minoru Sakamoto, Tsukuba, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.