The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jun. 21, 2010
Cyril Cabral, Jr., Mahopac, NY (US);
John M. Cotte, New Fairfield, CT (US);
Kathryn C. Fisher, Brooklyn, NY (US);
Laura L. Kosbar, Mohegan Lake, NY (US);
Christian Lavoie, Ossining, NY (US);
Zhu Liu, Kunming, CN;
Kenneth P. Rodbell, Sandy Hook, CT (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Cyril Cabral, Jr., Mahopac, NY (US);
John M. Cotte, New Fairfield, CT (US);
Kathryn C. Fisher, Brooklyn, NY (US);
Laura L. Kosbar, Mohegan Lake, NY (US);
Christian Lavoie, Ossining, NY (US);
Zhu Liu, Kunming, CN;
Kenneth P. Rodbell, Sandy Hook, CT (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.