The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Sep. 07, 2006
Ling Chen, Sunnyvale, CA (US);
Hua Chung, San Jose, CA (US);
Barry L. Chin, Saratoga, CA (US);
Hong Zhang, Fremont, CA (US);
Ling Chen, Sunnyvale, CA (US);
Hua Chung, San Jose, CA (US);
Barry L. Chin, Saratoga, CA (US);
Hong Zhang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.