The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 02, 2008
Fuchen Mu, Austin, TX (US);
Lifeng Wu, Cupertino, CA (US);
Cadence Design Systems, Inc., San Jose, CA (US);
Abstract
A method of determining a Negative Bias Temperature Instability (NBTI) effect that combines degradation and recovery for dynamic operation of an integrated circuit (IC) includes: specifying one or more parameters for a degradation model for the IC during a stressed portion of a voltage cycle; specifying one or more parameters for a recovery model for the IC during an unstressed portion of the voltage cycle; determining a degradation value for the voltage cycle from the degradation model; determining a recovery value for the voltage cycle from the recovery model; determining an NBTI value that combines the degradation value and the recovery value for the voltage cycle; and saving at least one value for the NBTI value.