The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2012

Filed:

Oct. 30, 2009
Applicants:

Derchang Kau, Cupertino, CA (US);

Johannes J. Kalb, San Jose, CA (US);

Brett Klehn, Santa Clara, CA (US);

Inventors:

Derchang Kau, Cupertino, CA (US);

Johannes J. Kalb, San Jose, CA (US);

Brett Klehn, Santa Clara, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/22 (2006.01); G11C 7/00 (2006.01); G11C 7/12 (2006.01); G11C 11/21 (2006.01);
U.S. Cl.
CPC ...
Abstract

Double-pulse write for phase change memory including: writing a phase change material from a high RESET state to a weakened RESET state with a first step, writing the phase change material from the weakened RESET state to a SET state with a second step, the second step having a lower current than the first step, verifying a parameter of the phase change material wherein if the parameter is higher than a target for a SET state, then repeating the writing with the first step, the writing with the second step, and the verifying until the parameter is lower than the target wherein a current for the first step is decreased by a decrement with each iteration without becoming lower than a current for the second step.


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