The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Dec. 18, 2009
Xiying Chen, San Jose, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Brian Le, San Jose, CA (US);
Roy Scheuerlein, Cupertino, CA (US);
LI Xiao, San Jose, CA (US);
Xiying Chen, San Jose, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Brian Le, San Jose, CA (US);
Roy Scheuerlein, Cupertino, CA (US);
Li Xiao, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is generally understood to refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. A first voltage is applied to 'partially form' the reversible resistivity-switching element. The first voltage has a first polarity. Partially forming the reversible resistivity-switching element lowers the resistance of the reversible resistivity-switching element. A second voltage that has the opposite polarity as the first is then applied to the reversible resistivity-switching element. Application of the second voltage may further lower the resistance of the reversible resistivity-switching element. Therefore, the second voltage could be considered as completing the forming of the reversible resistivity-switching element.