The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Sep. 09, 2004
Michael M. Iwatake, Wappingers Falls, NY (US);
Kevin E. Mello, Fishkill, NY (US);
Matthew W. Oonk, Poughkeepsie, NY (US);
Amanda L. Piper, Poughkeepsie, NY (US);
Yun Y. Wang, Poughquag, NY (US);
Keith K. Wong, Wappingers Falls, NY (US);
Michael M. Iwatake, Wappingers Falls, NY (US);
Kevin E. Mello, Fishkill, NY (US);
Matthew W. Oonk, Poughkeepsie, NY (US);
Amanda L. Piper, Poughkeepsie, NY (US);
Yun Y. Wang, Poughquag, NY (US);
Keith K. Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.