The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jun. 15, 2010
Christopher Boguslaw Kocon, Mountain Top, PA (US);
John Manning Savidge Neilson, Norristown, PA (US);
Simon John Molloy, Allentown, PA (US);
Haian Lin, Bethlehem, PA (US);
Charles Walter Pearce, Emmaus, PA (US);
Christopher Boguslaw Kocon, Mountain Top, PA (US);
John Manning Savidge Neilson, Norristown, PA (US);
Simon John Molloy, Allentown, PA (US);
Haian Lin, Bethlehem, PA (US);
Charles Walter Pearce, Emmaus, PA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A high performance, power integrated circuit composed of two charge balanced, extended drain NMOS transistors (CBDEMOS) formed on an n-substrate. A CBDENMOS transistor with an n-type substrate source. A charge balanced channel diode (CBCD) with an n-type substrate. A process for forming a high performance, power integrated circuit composed of two CBDENMOS transistors formed on an n-substrate. A process for forming a power integrated circuit composed of one CBDENMOS transistor and one CBCD on an n-type substrate.