The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 18, 2011
Gurtej S. Sandhu, Boise, ID (US);
D. Mark Durcan, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
D. Mark Durcan, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites are created on a surface of the substrate. The creation of the nucleation sites includes implanting ions with an energy and a dose selected to provide a controllable distribution of the nucleation sites across the surface of the substrate. Nanoscale structures can be grown using the controllable distribution of nucleation sites to seed the growth of the nanoscale structures. According to various embodiments, the nanoscale structures include at least one of nanocrystals, nanowires, and nanotubes. According to various nanocrystal embodiments, the nanocrystals are positioned within a gate stack and function as a floating gate for a nonvolatile device. Other embodiments are provided herein.