The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 29, 2010
Ming-huei Shen, Dounan Town, TW;
Shih-chang Liu, Alian Township, Kaohsiung County, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Ming-Huei Shen, Dounan Town, TW;
Shih-Chang Liu, Alian Township, Kaohsiung County, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device is provided which includes a bottom electrode contact formed on a substrate, and a dielectric layer formed on the bottom electrode contact. The device further includes a heating element formed in the dielectric layer, wherein the heating element is disposed between two air gaps separating the heating element from the dielectric layer, and a phase change element formed on the heating element, wherein the phase change element includes a substantially amorphous background and an active region, the active region capable of changing phase between amorphous and crystalline. A method of forming such a device is also provided.