The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 12, 2012
Young Pil Kim, Eden Prairie, MN (US);
Nurul Amin, Woodbury, MN (US);
Dadi Setiadi, Edina, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Wei Tian, Bloomington, MN (US);
Insik Jin, Eagan, MN (US);
Young Pil Kim, Eden Prairie, MN (US);
Nurul Amin, Woodbury, MN (US);
Dadi Setiadi, Edina, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Wei Tian, Bloomington, MN (US);
Insik Jin, Eagan, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.