The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jan. 28, 2011
Jun-ho Jeong, Suwon-si, KR;
Jang-eun Lee, Suwon-si, KR;
Se-chung OH, Suwon-si, KR;
Suk-hun Choi, Suwon-si, KR;
Jea-hyoung Lee, Seoul, KR;
Woo-jin Kim, Yongin-si, KR;
Woo-chang Lim, Hwaseong-si, KR;
Jun-Ho Jeong, Suwon-si, KR;
Jang-Eun Lee, Suwon-si, KR;
Se-Chung Oh, Suwon-si, KR;
Suk-Hun Choi, Suwon-si, KR;
Jea-Hyoung Lee, Seoul, KR;
Woo-Jin Kim, Yongin-si, KR;
Woo-Chang Lim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.