The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Nov. 14, 2008
Jin-ho Park, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jun-ho Park, Gyeonngi-do, KR;
Ho-ki Lee, Gyeonggi-do, KR;
Jin-ho Park, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jun-ho Park, Gyeonngi-do, KR;
Ho-ki Lee, Gyeonggi-do, KR;
Abstract
Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include Hremote plasma treating the W/WN barrier layer, forming a W-plug on the Hremote plasma treated W/WN barrier layer to fill the contact hole, and chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.