The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jul. 21, 2010
Takuya Seino, Kawasaki, JP;
Takashi Nakagawa, Hachioji, JP;
Naomu Kitano, Machida, JP;
Toru Tatsumi, Hachioji, JP;
Takuya Seino, Kawasaki, JP;
Takashi Nakagawa, Hachioji, JP;
Naomu Kitano, Machida, JP;
Toru Tatsumi, Hachioji, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10A/cmor less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700° C. or more is performed and obtain excellent heat resistance.