The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Sep. 30, 2010
Hans Weber, Bayerisch Gmain, DE;
Stefan Gamerith, Viallach, AT;
Roman Knoefler, Villach, AT;
Kurt Sorschag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch Gmain, DE;
Stefan Gamerith, Viallach, AT;
Roman Knoefler, Villach, AT;
Kurt Sorschag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor with a gate electrode structure is produced by providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface. A first trench extending from the first surface into the semiconductor body is formed by removing the sacrificial layer in a section adjacent the first surface. A second trench is formed by isotropically etching the semiconductor body in the first trench. A third trench is formed below the second trench by removing at least a part of the first sacrificial layer below the second trench. A dielectric layer is formed which at least covers sidewalls of the third trench and which only covers sidewalls of the second trench. A gate electrode is formed on the dielectric layer in the second trench. The gate electrode and dielectric layer in the second trench form the gate electrode structure.